Dual N-Channel Power MOSFET featuring 20V Drain to Source Breakdown Voltage (Vdss) and a maximum continuous drain current (ID) of 4.3A. This component offers a low Drain-Source On Resistance (Rds On) of 60mR. Operating within a temperature range of -55°C to 150°C, it is housed in a compact DFN package with 3x3mm dimensions and 0.95mm pitch, supplied on a 3000-piece tape and reel. Key switching characteristics include a 7ns turn-on delay and 17.5ns fall time, with a maximum power dissipation of 1.74W.
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Onsemi NTLGD3502NT2G technical specifications.
| Package/Case | DFN |
| Continuous Drain Current (ID) | 4.3A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 60mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 60MR |
| Element Configuration | Dual |
| Fall Time | 17.5ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 480pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.74W |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.74W |
| Radiation Hardening | No |
| Rds On Max | 60mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 8.6ns |
| Turn-On Delay Time | 7ns |
| RoHS | Compliant |
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