Dual P-Channel Power MOSFET featuring a -20V drain-source breakdown voltage and a continuous drain current of 3.3A. Offers a low drain-source on-resistance of 100mΩ at a 4.5V gate-source voltage. This MOSFET is housed in a compact 2x2mm WDFN6 package with a 0.65mm pitch, designed for efficient power management. Key electrical characteristics include a 6ns turn-on delay and 15ns fall time, with a maximum power dissipation of 710mW.
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Onsemi NTLJD3115PT1G technical specifications.
| Package/Case | DFN |
| Continuous Drain Current (ID) | 3.3A |
| Current Rating | -4.1A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 100mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 100MR |
| Element Configuration | Dual |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 0.75mm |
| Input Capacitance | 531pF |
| Lead Free | Lead Free |
| Length | 2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 710mW |
| Number of Elements | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.5W |
| Radiation Hardening | No |
| Rds On Max | 100mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 19.8ns |
| Turn-On Delay Time | 6ns |
| DC Rated Voltage | -20V |
| Width | 2mm |
| RoHS | Compliant |
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