The NTLJD3115PTAG is a P-channel dual N-channel MOSFET with a drain to source breakdown voltage of 20V and a continuous drain current of 2.3A. It has a maximum power dissipation of 1.5W and a maximum operating temperature of 150°C. The device is packaged in a WDFN6 package and is lead free and RoHS compliant. The MOSFET has an input capacitance of 531pF and a fall time of 15ns. It is suitable for use in a variety of applications including power management and switching circuits.
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Onsemi NTLJD3115PTAG technical specifications.
| Continuous Drain Current (ID) | 2.3A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Voltage (Vdss) | 20V |
| Element Configuration | Dual |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 531pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 710mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.5W |
| Rds On Max | 100mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 19.8ns |
| RoHS | Compliant |
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