Dual complementary N-channel and P-channel MOSFETs in a WDFN6 2x2 package. Features 20V drain-source breakdown voltage and 65mΩ maximum drain-source on-resistance. Continuous drain current is 2.3A with a nominal gate-source voltage of 700mV. Operating temperature range from -55°C to 150°C. RoHS compliant and lead-free.
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Onsemi NTLJD3119CTAG technical specifications.
| Package/Case | DFN |
| Continuous Drain Current (ID) | 2.3A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 65MR |
| Dual Supply Voltage | 20V |
| Element Configuration | Dual |
| Fall Time | 13.2ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 271pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 710mW |
| Nominal Vgs | 700mV |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 710mW |
| Radiation Hardening | No |
| Rds On Max | 65mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Threshold Voltage | 700mV |
| Turn-Off Delay Time | 13.7ns |
| RoHS | Compliant |
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