Dual N-Channel and P-Channel complementary power MOSFETs featuring a 20V drain-source breakdown voltage and a maximum continuous drain current of 2.3A. These devices offer a low on-resistance of 65mΩ at a nominal gate-source voltage of 700mV. Packaged in a compact 2x2mm WDFN6 with 0.65mm pitch, they operate across a wide temperature range of -55°C to 150°C. Ideal for power management applications, these RoHS compliant MOSFETs are supplied on a 3000-piece tape and reel.
PolarityP-CHANNEL
Power710mW
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Technical Specifications
Onsemi NTLJD3119CTBG technical specifications.
General
| Continuous Drain Current (ID) | 2.3A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 65MR |
| Element Configuration | Dual |
| Fall Time | 13.2ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 0.75mm |
| Input Capacitance | 271pF |
| Lead Free | Lead Free |
| Length | 2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 710mW |
| Nominal Vgs | 700mV |
| Number of Elements | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 710mW |
| Radiation Hardening | No |
| Rds On Max | 65mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | µCool™ |
| Threshold Voltage | 700mV |
| Turn-Off Delay Time | 13.7ns |
| Turn-On Delay Time | 5.2ns |
| Width | 2mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTLJD3119CTBG Datasheet
Download the complete datasheet for Onsemi NTLJD3119CTBG to view detailed technical specifications.
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