N-Channel Power MOSFET with integrated Schottky diode, featuring 30V drain-source breakdown voltage and 4.6A current rating. Offers 70mΩ maximum drain-source on-resistance and 1.5W power dissipation. Packaged in a 2x2mm WDFN6 footprint with 0.65mm pitch, this RoHS compliant component operates from -55°C to 150°C. Key switching parameters include a 4.8ns turn-on delay and 9.2ns fall time.
Current Rating4.6A
PolarityN-CHANNEL
Power1.5W
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Technical Specifications
Onsemi NTLJF4156NT1G technical specifications.
General
| Continuous Drain Current (ID) | 3.7A |
| Current Rating | 4.6A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 70mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 9.2ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 0.75mm |
| Input Capacitance | 427pF |
| Lead Free | Lead Free |
| Length | 2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 710mW |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.5W |
| Radiation Hardening | No |
| Rds On Max | 70mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 14.2ns |
| Turn-On Delay Time | 4.8ns |
| DC Rated Voltage | 30V |
| Width | 2mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTLJF4156NT1G Datasheet
Download the complete datasheet for Onsemi NTLJF4156NT1G to view detailed technical specifications.
No datasheet is available for this part.