The NTLJS1102PTAG is a P-channel junction field-effect transistor with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 700mW and a maximum drain to source breakdown voltage of -8V. The transistor is lead free and RoHS compliant, making it suitable for surface mount applications. Its input capacitance is 1.585nF and it has a gate to source voltage of 6V.
MountingSurface Mount
PolarityP-CHANNEL
Power3.3W
Quick Jump:
Technical Specifications
Onsemi NTLJS1102PTAG technical specifications.
General
| Continuous Drain Current (ID) | 3.7A |
| Drain to Source Breakdown Voltage | -8V |
| Drain to Source Resistance | 80mR |
| Drain to Source Voltage (Vdss) | 8V |
| Fall Time | 70ns |
| Gate to Source Voltage (Vgs) | 6V |
| Input Capacitance | 1.585nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 700mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 3.3W |
| Rds On Max | 36mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 80ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTLJS1102PTAG Datasheet
Download the complete datasheet for Onsemi NTLJS1102PTAG to view detailed technical specifications.
No datasheet is available for this part.
Product Images
