The NTLJS2103PTAG is a P-CHANNEL junction field-effect transistor with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 3.5A and a drain to source breakdown voltage of 12V. The device features a drain to source resistance of 40R and a maximum power dissipation of 700mW. It is packaged in a SMALL OUTLINE, R-PDSO-N6 package and is compliant with RoHS regulations.
Sign in to ask questions about the Onsemi NTLJS2103PTAG datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Onsemi NTLJS2103PTAG technical specifications.
| Continuous Drain Current (ID) | 3.5A |
| Drain to Source Breakdown Voltage | 12V |
| Drain to Source Resistance | 40R |
| Drain to Source Voltage (Vdss) | 12V |
| Element Configuration | Single |
| Fall Time | 27ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 1.157nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 700mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.9W |
| Rds On Max | 40mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 74ns |
| RoHS | Compliant |
Download the complete datasheet for Onsemi NTLJS2103PTAG to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
