Single P-Channel JFET with -12V Drain to Source Breakdown Voltage and 5.9A Continuous Drain Current. Features 40mΩ Drain to Source Resistance and 1.9W Power Dissipation. Operates across a temperature range of -55°C to 150°C. Packaged in a compact 2mm x 2mm x 0.75mm WDFN6 with 0.65mm pitch, suitable for tape and reel packaging. RoHS compliant and lead-free.
PackageTO-251-3
PolarityP-CHANNEL
Power1.9W
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Technical Specifications
Onsemi NTLJS2103PTBG technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 5.9A |
| Drain to Source Breakdown Voltage | 12V |
| Drain to Source Resistance | 40R |
| Drain to Source Voltage (Vdss) | 12V |
| Element Configuration | Single |
| Fall Time | 27ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 0.75mm |
| Input Capacitance | 1.157nF |
| Lead Free | Lead Free |
| Length | 2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 700mW |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.9W |
| Radiation Hardening | No |
| Rds On Max | 40mR |
| RoHS Compliant | Yes |
| Series | µCool™ |
| Turn-Off Delay Time | 74ns |
| Turn-On Delay Time | 8ns |
| Width | 2mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTLJS2103PTBG Datasheet
Download the complete datasheet for Onsemi NTLJS2103PTBG to view detailed technical specifications.
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