The NTLUD3A50PZTBG is a dual junction field-effect transistor from Onsemi. It features a maximum continuous drain current of 2.8A and a maximum power dissipation of 500mW. The device is lead free and RoHS compliant. It is packaged in tape and reel format and has an operating temperature range of -55°C to 150°C. The input capacitance is 920pF and the maximum Rds on is 50mR.
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Technical Specifications
Onsemi NTLUD3A50PZTBG technical specifications.
General
| Continuous Drain Current (ID) | 2.8A |
| Element Configuration | Dual |
| Input Capacitance | 920pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Packaging | Tape and Reel |
| Rds On Max | 50mR |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTLUD3A50PZTBG Datasheet
Download the complete datasheet for Onsemi NTLUD3A50PZTBG to view detailed technical specifications.
No datasheet is available for this part.