Single P-Channel Power MOSFET featuring a -20V Drain to Source Breakdown Voltage and 5.1A Continuous Drain Current. This component offers a low Rds On of 18mΩ at a Gate to Source Voltage of 8V, with a maximum power dissipation of 1.7W. Operating across a temperature range of -55°C to 150°C, it is housed in a compact 2x2mm UDFN6 package, supplied on a 3000-piece tape and reel. The device includes ESD protection and is RoHS compliant.
PolarityP-CHANNEL
Power1.7W
Quick Jump:
Technical Specifications
Onsemi NTLUS3A18PZTAG technical specifications.
General
| Continuous Drain Current (ID) | 5.1A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 90mR |
| Drain to Source Voltage (Vdss) | 20V |
| Element Configuration | Single |
| Fall Time | 88ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 0.5mm |
| Input Capacitance | 2.24nF |
| Lead Free | Lead Free |
| Length | 2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 700mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.7W |
| Radiation Hardening | No |
| Rds On Max | 18mR |
| RoHS Compliant | Yes |
| Series | µCool™ |
| Turn-Off Delay Time | 150ns |
| Turn-On Delay Time | 8.6ns |
| Width | 2mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTLUS3A18PZTAG Datasheet
Download the complete datasheet for Onsemi NTLUS3A18PZTAG to view detailed technical specifications.
No datasheet is available for this part.
Product Images
