Onsemi
NTLUS3A18PZTCG
Single P-Channel Power MOSFET with ESD Protection -20V -8.2A 18mΩ, UDFN6, 2x2, 0.65P, 3000-REEL
PolarityP-CHANNEL
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Technical Specifications
Onsemi NTLUS3A18PZTCG technical specifications.
General
| Continuous Drain Current (ID) | 5.1A |
| Drain to Source Resistance | 14.6mR |
| Element Configuration | Single |
| Fall Time | 88ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 2.24nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 700mW |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 18mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 150ns |
| Turn-On Delay Time | 8.6ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTLUS3A18PZTCG Datasheet
Download the complete datasheet for Onsemi NTLUS3A18PZTCG to view detailed technical specifications.
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