
Single P-channel power MOSFET featuring -20V drain-to-source breakdown voltage and 5.2A continuous drain current. Offers a low 39mΩ drain-to-source resistance (Rds On Max) and a 20V drain-to-source voltage (Vdss). This component operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 1.5W. Packaged in a compact UDFN6 (1.6x1.6x0.5mm) on a 3000-piece tape and reel, it is RoHS compliant and lead-free.
Onsemi NTLUS3A39PZTAG technical specifications.
| Continuous Drain Current (ID) | 5.2A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 39mR |
| Drain to Source Voltage (Vdss) | 20V |
| Element Configuration | Single |
| Fall Time | 34.8ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 0.5mm |
| Input Capacitance | 920pF |
| Lead Free | Lead Free |
| Length | 1.6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 600mW |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.5W |
| Radiation Hardening | No |
| Rds On Max | 39mR |
| RoHS Compliant | Yes |
| Series | µCool™ |
| Turn-Off Delay Time | 34.7ns |
| Turn-On Delay Time | 7.2ns |
| Width | 1.6mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi NTLUS3A39PZTAG to view detailed technical specifications.
No datasheet is available for this part.