The NTLUS3A39PZTBG is a P-CHANNEL JFET transistor with a maximum continuous drain current of 3.4A and a drain to source breakdown voltage of -20V. It has a maximum power dissipation of 1.5W and a maximum operating temperature of 150°C. The transistor is packaged in a tape and reel format and is lead free. It is RoHS compliant and has a drain to source resistance of 39mR.
PolarityP-CHANNEL
Power1.5W
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Technical Specifications
Onsemi NTLUS3A39PZTBG technical specifications.
General
| Continuous Drain Current (ID) | 3.4A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 39mR |
| Drain to Source Voltage (Vdss) | 20V |
| Element Configuration | Single |
| Fall Time | 34.8ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 920pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 600mW |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.5W |
| Radiation Hardening | No |
| Rds On Max | 39mR |
| RoHS Compliant | Yes |
| Series | µCool™ |
| Turn-Off Delay Time | 34.7ns |
| Turn-On Delay Time | 7.2ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTLUS3A39PZTBG Datasheet
Download the complete datasheet for Onsemi NTLUS3A39PZTBG to view detailed technical specifications.
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