The NTLUS3A90PZTBG is a single junction field-effect transistor with a maximum drain to source voltage of 20V and continuous drain current of 2.6A. It has a maximum power dissipation of 600mW and is packaged in a lead-free UDFN-6 package. The transistor operates over a temperature range of -55°C to 150°C and is RoHS compliant. The NTLUS3A90PZTBG has an input capacitance of 950pF and a maximum Rds on of 62mR.
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Onsemi NTLUS3A90PZTBG technical specifications.
| Continuous Drain Current (ID) | 2.6A |
| Drain to Source Voltage (Vdss) | 20V |
| Element Configuration | Single |
| Fall Time | 28.5ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 950pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 600mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Power Dissipation | 1.5W |
| Radiation Hardening | No |
| Rds On Max | 62mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 34.8ns |
| Turn-On Delay Time | 7.9ns |
| RoHS | Compliant |
