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Technical Specifications
Onsemi NTMD2P01R2 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 2.3A |
| Current Rating | -2.3A |
| Drain to Source Breakdown Voltage | -16V |
| Drain to Source Resistance | 100mR |
| Drain to Source Voltage (Vdss) | 16V |
| Fall Time | 29ns |
| Gate to Source Voltage (Vgs) | 10V |
| Input Capacitance | 750pF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 710mW |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2W |
| Rds On Max | 100mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 33ns |
| DC Rated Voltage | -16V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi NTMD2P01R2 Datasheet
Download the complete datasheet for Onsemi NTMD2P01R2 to view detailed technical specifications.
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