Dual P-Channel Power MOSFET featuring a -30V drain-source breakdown voltage and a continuous drain current of -3.05A. Surface mountable in a narrow SOIC-8 package, this component offers a low drain-source on-resistance of 85mΩ. Operating temperature range spans from -55°C to 150°C with a maximum power dissipation of 2W. RoHS compliant and supplied on tape and reel.
PackageSOIC
Current Rating-3.05A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Onsemi NTMD3P03R2G technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | -3.05A |
| Current Rating | -3.05A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 85mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 85MR |
| Fall Time | 45ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 750pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Nominal Vgs | -1.7V |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 85mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 16ns |
| DC Rated Voltage | -30V |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTMD3P03R2G Datasheet
Download the complete datasheet for Onsemi NTMD3P03R2G to view detailed technical specifications.
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