Dual N-Channel Power MOSFET featuring 30V drain-to-source breakdown voltage and 6.4A continuous drain current. Offers low 20mΩ drain-to-source resistance and 1.28W power dissipation. Packaged in a narrow SOIC-8 body with a tape and reel configuration for 2500 units. Operates across a wide temperature range from -55°C to 150°C.
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Onsemi NTMD4820NR2G technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 6.4A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 20mR |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Dual |
| Fall Time | 4ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 940pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 750mW |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.28W |
| Radiation Hardening | No |
| Rds On Max | 20mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 21ns |
| Turn-On Delay Time | 9.4ns |
| Width | 4mm |
| RoHS | Compliant |
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