Dual N-Channel Power MOSFET featuring 30V Drain to Source Breakdown Voltage and 7.5A Continuous Drain Current. Offers low 24mΩ Drain to Source Resistance and 1.95W Power Dissipation. SOIC-8 Narrow Body package with 5mm length, 4mm width, and 1.5mm height. Operates from -55°C to 150°C, with 3ns fall time and 7.6ns turn-on delay. Lead Free and RoHS Compliant.
PackageSOIC
PolarityN-CHANNEL
Power1.95W
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Technical Specifications
Onsemi NTMD4840NR2G technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 28mR |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Dual |
| Fall Time | 3ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 520pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 680mW |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.95W |
| Radiation Hardening | No |
| Rds On Max | 24mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 17ns |
| Turn-On Delay Time | 7.6ns |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTMD4840NR2G Datasheet
Download the complete datasheet for Onsemi NTMD4840NR2G to view detailed technical specifications.
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