Dual N-Channel Power MOSFET featuring 30V drain-source breakdown voltage and 4A continuous drain current. Offers a low 48mΩ maximum drain-source on-resistance. This SOIC-packaged component operates within a -55°C to 150°C temperature range and has a 2W maximum power dissipation. Ideal for applications requiring efficient switching with fast turn-on (7ns) and turn-off (16ns) times.
Onsemi NTMD4N03R2G technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 4A |
| Current Rating | 4A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 48mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 48MR |
| Element Configuration | Dual |
| Fall Time | 10ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 400pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Number of Elements | 2 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 60mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 16ns |
| Turn-On Delay Time | 7ns |
| DC Rated Voltage | 30V |
| Width | 4mm |
| RoHS | Compliant |
No datasheet is available for this part.
