Dual N-Channel Power MOSFET with 40V Drain-to-Source Breakdown Voltage and 5.7A Continuous Drain Current. Features 9.5mΩ Drain-to-Source Resistance at 10V Vgs and 12mΩ Rds On. Operates with a Gate-to-Source Voltage up to 20V and offers a maximum power dissipation of 1.5W. Packaged in a narrow body SOIC-8, this component is RoHS compliant and lead-free, suitable for operation between -55°C and 150°C.
Onsemi NTMD5836NLR2G technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 5.7A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 9.5mR |
| Drain to Source Voltage (Vdss) | 40V |
| Element Configuration | Dual |
| Fall Time | 8.5ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 2.12nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.5W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.5W |
| Radiation Hardening | No |
| Rds On Max | 12mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 26ns |
| Width | 4mm |
| RoHS | Compliant |
No datasheet is available for this part.
