Dual N-Channel Power MOSFET, 40V Vds, 7.4A ID, featuring 25mR Rds On at 10V Vgs. Logic-level gate drive with a 1.8V threshold voltage. SOIC-8 narrow body package with 2.1W max power dissipation. Operates from -55°C to 150°C, with fast switching characteristics including 4ns fall time. RoHS compliant and supplied on 2500-piece tape and reel.
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Onsemi NTMD5838NLR2G technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 7.4A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 25mR |
| Drain to Source Voltage (Vdss) | 40V |
| Element Configuration | Dual |
| Fall Time | 4ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 785pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.1W |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.1W |
| Radiation Hardening | No |
| Rds On Max | 25mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 1.8V |
| Turn-Off Delay Time | 17ns |
| Turn-On Delay Time | 11ns |
| Width | 4mm |
| RoHS | Compliant |
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