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Technical Specifications
Onsemi NTMD6N02R2 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 3.92A |
| Current Rating | 6A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 35mR |
| Drain to Source Voltage (Vdss) | 20V |
| Element Configuration | Dual |
| Fall Time | 80ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 1.1nF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 730mW |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Rds On Max | 35mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 45ns |
| DC Rated Voltage | 20V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi NTMD6N02R2 Datasheet
Download the complete datasheet for Onsemi NTMD6N02R2 to view detailed technical specifications.
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