Dual N-Channel Power MOSFET featuring 30V drain-source breakdown voltage and 6A continuous drain current. Offers low 32mΩ drain-source on-resistance. Designed for surface mount applications in an SO-8 package, with a maximum power dissipation of 2W. Includes 45ns fall time and 950pF input capacitance, operating from -55°C to 150°C.
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Onsemi NTMD6N03R2G technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 6A |
| Current Rating | 6A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 32mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 32MR |
| Fall Time | 45ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 950pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.29W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Rds On Max | 32mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 1.8V |
| Turn-Off Delay Time | 45ns |
| DC Rated Voltage | 30V |
| RoHS | Compliant |
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