The NTMD6N04R2G is a dual N-channel MOSFET with a maximum continuous drain current of 5.8A and a drain to source breakdown voltage of 40V. It has a maximum power dissipation of 1.5W and operates over a temperature range of -55°C to 150°C. The device is packaged in a SOIC-8 package and is compliant with RoHS regulations.
PackageSOIC
PolarityN-CHANNEL
Power2W
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Technical Specifications
Onsemi NTMD6N04R2G technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 5.8A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 34mR |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Dual |
| Fall Time | 35ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 240pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.5W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 59mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 15ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTMD6N04R2G Datasheet
Download the complete datasheet for Onsemi NTMD6N04R2G to view detailed technical specifications.
No datasheet is available for this part.