Dual P-Channel Power MOSFET featuring a -20V drain-source breakdown voltage and a continuous drain current of 7.8A. Offers a low drain-source on-resistance of 33mΩ (max) and 27mΩ. This SOIC-8 narrow body package component operates within a temperature range of -55°C to 150°C, with a gate-to-source voltage of 12V and a threshold voltage of -880mV. Includes a 1.7nF input capacitance and is supplied in tape and reel packaging.
PackageSOIC
Current Rating-6A
PolarityP-CHANNEL
Power2W
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Technical Specifications
Onsemi NTMD6P02R2G technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
7.8A
Current Rating
-6A
Drain to Source Breakdown Voltage
-20V
Drain to Source Resistance
27mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
33mR
Element Configuration
Dual
Fall Time
50ns
Gate to Source Voltage (Vgs)
12V
Height
1.5mm
Input Capacitance
1.7nF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Output Current
6A
Max Power Dissipation
750mW
Number of Drivers
2
Number of Outputs
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
2W
Radiation Hardening
No
Rds On Max
33mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
-880mV
Turn-Off Delay Time
85ns
DC Rated Voltage
-20V
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Onsemi NTMD6P02R2G Datasheet
Download the complete datasheet for Onsemi NTMD6P02R2G to view detailed technical specifications.
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