Dual P-Channel Power MOSFET featuring a -20V drain-source breakdown voltage and a continuous drain current of 7.8A. Offers a low drain-source on-resistance of 33mΩ (max) and 27mΩ. This SOIC-8 narrow body package component operates within a temperature range of -55°C to 150°C, with a gate-to-source voltage of 12V and a threshold voltage of -880mV. Includes a 1.7nF input capacitance and is supplied in tape and reel packaging.
Onsemi NTMD6P02R2G technical specifications.
Download the complete datasheet for Onsemi NTMD6P02R2G to view detailed technical specifications.
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