Dual asymmetric N-channel power MOSFET with a 30 V drain-to-source rating in a 5 x 6 mm PQFN8 Power Clip package. The device integrates a 57 A Q1 FET and a 165 A Q2 FET, with maximum RDS(on) of 5.0 mΩ and 1.0 mΩ at 10 V gate drive. It supports gate-to-source ratings of ±20 V for Q1 and +16/-12 V for Q2 and operates from -55 °C to 150 °C junction temperature. Typical applications include DC-DC converters and system voltage rails. The part is Pb-free, halogen-free/BFR-free, and RoHS compliant.
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| Max Operating Temperature | 150 |
| Number of Terminals | 8 |
| Min Operating Temperature | -55 |
| Terminal Position | DUAL |
| Number of Elements | 2 |
| Lead Free | Yes |
| REACH | not_compliant |
| Military Spec | False |
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