This device is an asymmetric dual N-channel power MOSFET that integrates 30 V and 25 V FETs in a compact 5 x 6 mm footprint. It uses Power Trench and Power Clip construction to reduce conduction and driver losses in fast-switching designs. The part is intended for system voltage rails and general-purpose point-of-load applications. Maximum continuous drain current is specified up to 180 A for Q1 and 130 A for Q2 in steady-state conditions, with a maximum gate-source voltage of ±16 V. Junction-to-case thermal resistance is specified as 4.3 °C/W for Q1 and 3.3 °C/W for Q2.
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Onsemi NTMFD0D9N02P1E technical specifications.
| Channel Type | Dual N-Channel |
| Configuration | Asymmetric |
| Drain-Source Voltage (Q1) | 30V |
| Drain-Source Voltage (Q2) | 25V |
| Gate-Source Voltage | ±16V |
| Continuous Drain Current (Q1) | 180A |
| Continuous Drain Current (Q2) | 130A |
| Thermal Resistance Junction-to-Case (Q1) | 4.3°C/W |
| Thermal Resistance Junction-to-Case (Q2) | 3.3°C/W |
| Thermal Resistance Junction-to-Ambient (Q1) | 130°C/W |
| Thermal Resistance Junction-to-Ambient (Q2) | 120°C/W |
| Footprint | 5 x 6mm |
| Technology | Power Trench |
| Clip Type | Power Clip |
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