This device is a dual N-channel power MOSFET with an integrated Schottky diode in a compact SO8FL package. It is rated for 30 V operation, with a high-side continuous drain current up to 18 A and a low-side continuous drain current up to 23 A. The MOSFETs are optimized for reduced power loss and low parasitic inductance, with maximum on-resistance values down to 6.5 mΩ for the top FET and 4.1 mΩ for the bottom FET at 10 V gate drive. The part is specified for junction temperatures from -55 °C to 150 °C and is described as Pb-free, halogen-free/BFR-free, and RoHS compliant.
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Onsemi NTMFD4902NF technical specifications.
| Transistor Type | Dual N-Channel MOSFET with Integrated Schottky |
| Drain-to-Source Voltage | 30V |
| Continuous Drain Current High-Side | 18A |
| Continuous Drain Current Low-Side | 23A |
| On-Resistance High-Side at VGS=10V | 6.5mΩ |
| On-Resistance High-Side at VGS=4.5V | 10mΩ |
| On-Resistance Low-Side at VGS=10V | 4.1mΩ |
| On-Resistance Low-Side at VGS=4.5V | 6.2mΩ |
| Gate-to-Source Voltage | ±20V |
| Junction Temperature Range | -55 to 150°C |
| Threshold Voltage | 1.2 to 2.2V |
| Input Capacitance High-Side | 1150pF |
| Input Capacitance Low-Side | 1590pF |
| Total Gate Charge High-Side at VGS=10V | 19.1nC |
| Total Gate Charge Low-Side at VGS=10V | 24.9nC |
| Reverse Recovery Charge High-Side | 12nC |
| Reverse Recovery Charge Low-Side | 24nC |
| Gate Resistance | 0.8Ω |
| RoHS | Compliant |
| Pb-free | Yes |
| Halogen Free | Yes |
| Bfr Free | Yes |
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