The NTMFD4C20NT1G is a 2 N-Channel dual FET from Onsemi, featuring a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 1.15W and a maximum drain to source voltage of 30V. The device is packaged in a halogen-free and lead-free DFN package, with a maximum continuous drain current of 13.7A and a drain to source resistance of 7.3mR. It is RoHS compliant and available in quantities of 1500 on tape and reel.
PackageDFN
PolarityN-CHANNEL
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Technical Specifications
Onsemi NTMFD4C20NT1G technical specifications.
General
| Package/Case | DFN |
| Continuous Drain Current (ID) | 13.7A |
| Drain to Source Resistance | 7.3mR |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Dual |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 970pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.15W |
| Package Quantity | 1500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 7.3mR |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTMFD4C20NT1G Datasheet
Download the complete datasheet for Onsemi NTMFD4C20NT1G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.