
N-Channel Power MOSFET, surface mount, featuring 30V drain-source breakdown voltage and 20A continuous drain current. Offers low 3.5mΩ drain-source on-resistance and 2.3W power dissipation. Operates from -55°C to 150°C, with fast switching times including 28ns turn-on and 35ns turn-off delays. Packaged in a DFN SO-8FL case, supplied on a 1500-piece tape and reel.
Onsemi NTMFS4119NT1G technical specifications.
| Package/Case | DFN |
| Continuous Drain Current (ID) | 20A |
| Current Rating | 18A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 3.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 2.3MR |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 4.8nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 900mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.3W |
| Radiation Hardening | No |
| Rds On Max | 3.5mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 28ns |
| DC Rated Voltage | 30V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi NTMFS4119NT1G to view detailed technical specifications.
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