The NTMFS4701NT1G is an N-channel junction field-effect transistor with a maximum continuous drain current of 7.7A and a drain-to-source breakdown voltage of 30V. It features a drain-to-source resistance of 8mR and a maximum power dissipation of 900mW. The device is packaged in a lead-free DFN6 package and is suitable for surface mount applications. The operating temperature range is from -55°C to 150°C, and the device is RoHS compliant.
PackageDFN
Current Rating12.3A
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Onsemi NTMFS4701NT1G technical specifications.
General
| Package/Case | DFN |
| Continuous Drain Current (ID) | 7.7A |
| Current Rating | 12.3A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 8mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 19ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.28nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 900mW |
| Mount | Surface Mount |
| Package Quantity | 1500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.3W |
| Rds On Max | 8mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 29ns |
| DC Rated Voltage | 30V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTMFS4701NT1G Datasheet
Download the complete datasheet for Onsemi NTMFS4701NT1G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.