Single N-Channel Power MOSFET featuring 30V drain-source breakdown voltage and 58.5A continuous drain current. Offers a low 6.95mΩ drain-source on-resistance at a 10V gate-source voltage. This component is housed in a compact DFN 5x6 package with a 1.27mm pitch, designed for efficient power management with a maximum power dissipation of 38.5W. Operating across a wide temperature range from -55°C to 150°C, it boasts fast switching characteristics with turn-on delay of 13.3ns and fall time of 3.8ns.
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Onsemi NTMFS4821NT1G technical specifications.
| Package/Case | DFN |
| Continuous Drain Current (ID) | 58.5A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 6.95mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 10.8MR |
| Element Configuration | Single |
| Fall Time | 3.8ns |
| Gate to Source Voltage (Vgs) | 16V |
| Height | 1.1mm |
| Input Capacitance | 1.4nF |
| Lead Free | Lead Free |
| Length | 5.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 870mW |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 38.5W |
| Radiation Hardening | No |
| Rds On Max | 6.95mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 16.6ns |
| Turn-On Delay Time | 13.3ns |
| Width | 6.1mm |
| RoHS | Compliant |
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