Single N-Channel Power MOSFET featuring 30V drain-source breakdown voltage and 30A continuous drain current. Offers a low 10.6mΩ drain-source on-resistance. Packaged in a DFN 5x6 footprint with a 1.27mm pitch, this component operates from -55°C to 150°C with a maximum power dissipation of 32.5W. Includes fast switching characteristics with turn-on delay of 10.8ns and fall time of 3.8ns.
PackageDFN
PolarityN-CHANNEL
Power5.43W
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Technical Specifications
Onsemi NTMFS4823NT1G technical specifications.
General
| Package/Case | DFN |
| Continuous Drain Current (ID) | 30A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 15.6R |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 10.6MR |
| Element Configuration | Single |
| Fall Time | 3.8ns |
| Gate to Source Voltage (Vgs) | 16V |
| Height | 1.1mm |
| Input Capacitance | 795pF |
| Lead Free | Lead Free |
| Length | 5.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 32.5W |
| Package Quantity | 1500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 5.43W |
| Radiation Hardening | No |
| Rds On Max | 10.6mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 1.9V |
| Turn-Off Delay Time | 12.7ns |
| Turn-On Delay Time | 10.8ns |
| Width | 6.1mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTMFS4823NT1G Datasheet
Download the complete datasheet for Onsemi NTMFS4823NT1G to view detailed technical specifications.
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