The NTMFS4823NT3G is an N-channel junction field-effect transistor with a breakdown voltage of 30V and a continuous drain current of 30A. It features a drain to source resistance of 10.6mR and a gate to source voltage of 16V. The device is packaged in a DFN package and is RoHS compliant. It operates over a temperature range of -55°C to 150°C and has a maximum power dissipation of 32.5W.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Onsemi NTMFS4823NT3G datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Onsemi NTMFS4823NT3G technical specifications.
| Package/Case | DFN |
| Continuous Drain Current (ID) | 30A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 10.6mR |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Single |
| Fall Time | 3.8ns |
| Gate to Source Voltage (Vgs) | 16V |
| Input Capacitance | 795pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 32.5W |
| Package Quantity | 1500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 5.43W |
| Rds On Max | 10.6mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 12.7ns |
| RoHS | Compliant |
Download the complete datasheet for Onsemi NTMFS4823NT3G to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
