N-Channel MOSFET, single element configuration, featuring a 30V drain-source breakdown voltage and a maximum continuous drain current of 191A. Offers a low drain-source on-resistance of 2mΩ at a 10V gate-source voltage. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 125W. Packaged in a DFN 5x6 footprint, this RoHS compliant component is supplied on a 1500-piece tape and reel.
Onsemi NTMFS4833NT1G technical specifications.
| Package/Case | DFN |
| Continuous Drain Current (ID) | 191A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 3mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 2MR |
| Element Configuration | Single |
| Fall Time | 17ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.05mm |
| Input Capacitance | 5.6nF |
| Lead Free | Lead Free |
| Length | 5.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.35W |
| Radiation Hardening | No |
| Rds On Max | 2mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 1.5V |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 25ns |
| Width | 6.1mm |
| RoHS | Compliant |
No datasheet is available for this part.
