Single N-Channel MOSFET featuring 30V drain-to-source breakdown voltage and 2mΩ Rds On. This component offers a continuous drain current of 26A and a maximum power dissipation of 125W. Designed with a DFN 5x6 package, it operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 25ns turn-on delay and a 17ns fall time.
PackageDFN
PolarityN-CHANNEL
Power2.35W
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Technical Specifications
Onsemi NTMFS4833NT3G technical specifications.
General
| Package/Case | DFN |
| Continuous Drain Current (ID) | 26A |
| Drain to Source Breakdown Voltage | 30V |
| Element Configuration | Single |
| Fall Time | 17ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.1mm |
| Input Capacitance | 5.6nF |
| Lead Free | Lead Free |
| Length | 5.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Nominal Vgs | 1.5V |
| Number of Elements | 1 |
| Package Quantity | 5000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.35W |
| Radiation Hardening | No |
| Rds On Max | 2mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 25ns |
| Width | 6.1mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTMFS4833NT3G Datasheet
Download the complete datasheet for Onsemi NTMFS4833NT3G to view detailed technical specifications.
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