Single N-Channel Power MOSFET featuring 30V drain-source breakdown voltage and a maximum continuous drain current of 57A. Achieves a low 7mΩ maximum drain-source on-resistance. This component is housed in a compact DFN 5x6 package with a 1.27mm pitch, measuring 5.1mm in length, 6.1mm in width, and 1.1mm in height. It operates across a temperature range of -55°C to 150°C and offers a maximum power dissipation of 41.7W. RoHS compliant and lead-free.
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Onsemi NTMFS4841NT1G technical specifications.
| Package/Case | DFN |
| Continuous Drain Current (ID) | 57A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 7MR |
| Element Configuration | Single |
| Fall Time | 7.5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.1mm |
| Input Capacitance | 1.436nF |
| Lead Free | Lead Free |
| Length | 5.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 41.7W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 5W |
| Radiation Hardening | No |
| Rds On Max | 7mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 2.5V |
| Turn-Off Delay Time | 15.5ns |
| Turn-On Delay Time | 13.5ns |
| Width | 6.1mm |
| RoHS | Compliant |
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