
Single N-Channel Power MOSFET featuring 30V drain-to-source breakdown voltage and 115A maximum output current. This component offers a low 2.9mΩ drain-to-source resistance (Rds On Max) and operates with a gate-to-source voltage up to 16V. Key switching characteristics include a 12.2ns fall time, 20.5ns turn-on delay, and 28.9ns turn-off delay, with an input capacitance of 3.72nF. Housed in a DFN 5x6 package, this RoHS compliant and lead-free device is supplied on a 1500-piece tape and reel.
Onsemi NTMFS4845NT1G technical specifications.
| Package/Case | DFN |
| Continuous Drain Current (ID) | 35.5A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 2.9mR |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Single |
| Fall Time | 12.2ns |
| Gate to Source Voltage (Vgs) | 16V |
| Input Capacitance | 3.72nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Output Current | 115A |
| Max Power Dissipation | 890mW |
| Max Supply Voltage | 30V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 5.95W |
| Radiation Hardening | No |
| Rds On Max | 2.9mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 28.9ns |
| Turn-On Delay Time | 20.5ns |
| RoHS | Compliant |
Download the complete datasheet for Onsemi NTMFS4845NT1G to view detailed technical specifications.
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