This device is a single N-channel power MOSFET rated for 30 V drain-to-source voltage and 85 A continuous drain current at 25°C case temperature. It is housed in a thermally enhanced SO-8FL package and is intended for low-side switching, CPU power delivery, and DC-DC converter applications. The datasheet specifies maximum drain-source on-resistance of 4.1 mΩ at 10 to 11.5 V gate drive and 6.2 mΩ at 4.5 V gate drive. Total gate charge is specified as 28 nC at 4.5 V gate drive and 43.8 nC at 11.5 V gate drive, with 2614 pF typical input capacitance. Operating and storage junction temperature range is -55°C to +150°C, and the device is identified as Pb-free.
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Onsemi NTMFS4847N technical specifications.
| Drain-to-Source Voltage | 30V |
| Continuous Drain Current | 85A |
| Gate-to-Source Voltage | ±16V |
| Drain-to-Source On-Resistance | 4.1 max @ VGS=10-11.5 V, ID=30 AmΩ |
| Drain-to-Source On-Resistance | 6.2 max @ VGS=4.5 V, ID=30 AmΩ |
| Gate Threshold Voltage | 1.45 to 2.5V |
| Forward Transconductance | 74S |
| Input Capacitance | 2614pF |
| Output Capacitance | 466pF |
| Reverse Transfer Capacitance | 241pF |
| Total Gate Charge | 28 max @ VGS=4.5 VnC |
| Total Gate Charge | 43.8 typ @ VGS=11.5 VnC |
| Gate-to-Source Charge | 7.3 typnC |
| Gate-to-Drain Charge | 6.1 typnC |
| Junction-to-Case Thermal Resistance | 2.6°C/W |
| Operating Junction Temperature Range | -55 to +150°C |
| Pulsed Drain Current | 170A |
| Avalanche Energy | 163mJ |
| Pb-free | Yes |
