Single N-Channel Power MOSFET featuring 30V drain-source breakdown voltage and 85A continuous drain current. Offers a low 4.1mΩ drain-source resistance (Rds On Max) and operates with a 16V gate-source voltage. This surface mount component, packaged in a DFN 5x6 with 1.27P pitch, boasts a maximum power dissipation of 48.4W and a maximum operating temperature of 150°C. Includes fast switching characteristics with turn-on delay time of 17.7ns and fall time of 8.7ns.
PackageDFN
MountingSurface Mount
PolarityN-CHANNEL
Power48.1W
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Technical Specifications
Onsemi NTMFS4847NAT1G technical specifications.
General
| Package/Case | DFN |
| Continuous Drain Current (ID) | 85A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 4.1mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 8.7ns |
| Gate to Source Voltage (Vgs) | 16V |
| Height | 1.1mm |
| Input Capacitance | 2.614nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 48.4W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 48.1W |
| Radiation Hardening | No |
| Rds On Max | 4.1mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 21ns |
| Turn-On Delay Time | 17.7ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTMFS4847NAT1G Datasheet
Download the complete datasheet for Onsemi NTMFS4847NAT1G to view detailed technical specifications.
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