
Single N-Channel Power MOSFET featuring 30V Drain to Source Breakdown Voltage and 4.1mΩ Drain to Source Resistance. This component offers a continuous drain current of 29.5A and a maximum power dissipation of 48.4W. Designed with a DFN 5x6 package and 1.27P lead pitch, it operates within a temperature range of -55°C to 150°C. Key switching characteristics include an 8.7ns fall time, 17.7ns turn-on delay, and 21ns turn-off delay, with an input capacitance of 2.614nF. The device is RoHS compliant and supplied on a 1500-piece tape and reel.
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Onsemi NTMFS4847NT1G technical specifications.
| Package/Case | DFN |
| Continuous Drain Current (ID) | 29.5A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 4.1mR |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Single |
| Fall Time | 8.7ns |
| Gate to Source Voltage (Vgs) | 16V |
| Input Capacitance | 2.614nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 48.4W |
| Nominal Vgs | 1.8V |
| Package Quantity | 1500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 5.8W |
| Radiation Hardening | No |
| Rds On Max | 4.1mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 21ns |
| Turn-On Delay Time | 17.7ns |
| RoHS | Compliant |
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