N-channel enhancement mode power MOSFET featuring 30V drain-source voltage and 22.5A continuous drain current. This surface-mount component utilizes a lead-frame SMT package family, specifically SO-FL, with a 5-pin configuration (4+Tab) and flat leads. Key electrical characteristics include a maximum drain-source on-resistance of 3 mOhm at 10V, typical gate charge of 49.5 nC at 10V, and typical input capacitance of 3233 pF at 12V. The device offers a maximum power dissipation of 7230 mW and operates within a temperature range of -55°C to 150°C.
PackageSO-FL
MountingSurface Mount
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Technical Specifications
Onsemi NTMFS4898NFT3G technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SO |
| Package/Case | SO-FL |
| Lead Shape | Flat |
| Pin Count | 5 |
| PCB | 4 |
| Tab | Tab |
| Package Length (mm) | 4.9 |
| Package Width (mm) | 5.9 |
| Package Height (mm) | 1.05(Max) |
| Seated Plane Height (mm) | 1 |
| Pin Pitch (mm) | 1.27 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain Triple Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 22.5A |
| Maximum Drain Source Resistance | 3@10VmOhm |
| Typical Gate Charge @ Vgs | [email protected]|49.5@10VnC |
| Typical Gate Charge @ 10V | 49.5nC |
| Typical Input Capacitance @ Vds | 3233@12VpF |
| Maximum Power Dissipation | 7230mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 5V1P1 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Onsemi NTMFS4898NFT3G Datasheet
Download the complete datasheet for Onsemi NTMFS4898NFT3G to view detailed technical specifications.
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