Single N-Channel Power MOSFET featuring 30V drain-to-source breakdown voltage and 38A continuous drain current. Offers a low 7.3mΩ drain-to-source on-resistance at a 10V gate-source voltage. This component operates within a -55°C to 150°C temperature range and is housed in a compact DFN5 5x6 package. Key switching characteristics include a 4.4ns fall time and 9.2ns turn-on delay time.
PackageTO-251-3
PolarityN-CHANNEL
Power20.8W
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Technical Specifications
Onsemi NTMFS4927NT1G technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 38A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 13.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Single |
| Fall Time | 4.4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.1mm |
| Input Capacitance | 913pF |
| Lead Free | Lead Free |
| Length | 5.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 920mW |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 20.8W |
| Radiation Hardening | No |
| Rds On Max | 7.3mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 14ns |
| Turn-On Delay Time | 9.2ns |
| Width | 6.1mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTMFS4927NT1G Datasheet
Download the complete datasheet for Onsemi NTMFS4927NT1G to view detailed technical specifications.
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