Single N-Channel Power MOSFET featuring 30V drain-to-source breakdown voltage and 38A continuous drain current. Offers a low 7.3mΩ drain-to-source on-resistance at a 10V gate-source voltage. This component operates within a -55°C to 150°C temperature range and is housed in a compact DFN5 5x6 package. Key switching characteristics include a 4.4ns fall time and 9.2ns turn-on delay time.
PackageTO-251-3
PolarityN-CHANNEL
Power20.8W
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Technical Specifications
Onsemi NTMFS4927NT1G technical specifications.
General
Package/Case
TO-251-3
Continuous Drain Current (ID)
38A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
13.5mR
Drain to Source Voltage (Vdss)
30V
Element Configuration
Single
Fall Time
4.4ns
Gate to Source Voltage (Vgs)
20V
Height
1.1mm
Input Capacitance
913pF
Lead Free
Lead Free
Length
5.1mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
920mW
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
20.8W
Radiation Hardening
No
Rds On Max
7.3mR
RoHS Compliant
Yes
Turn-Off Delay Time
14ns
Turn-On Delay Time
9.2ns
Width
6.1mm
Compliance
RoHS
Compliant
Datasheet
Onsemi NTMFS4927NT1G Datasheet
Download the complete datasheet for Onsemi NTMFS4927NT1G to view detailed technical specifications.
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