The NTMFS4933NT1G is an N-channel junction field-effect transistor (JFET) with a maximum operating temperature range of -55°C to 150°C. It features a maximum drain to source breakdown voltage of 30V and a continuous drain current of 210A. The device is packaged in a lead-free DFN package and is compliant with RoHS regulations. The NTMFS4933NT1G has a maximum power dissipation of 104W and a maximum drain to source resistance of 2mR.
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Onsemi NTMFS4933NT1G technical specifications.
| Package/Case | DFN |
| Continuous Drain Current (ID) | 210A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 2mR |
| Element Configuration | Single |
| Fall Time | 23ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 10.93nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 104W |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.74W |
| Radiation Hardening | No |
| Rds On Max | 1.2mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 47ns |
| Turn-On Delay Time | 31ns |
| RoHS | Compliant |
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