N-channel enhancement mode power MOSFET featuring a 30V drain-source voltage and 21.8A continuous drain current. This single-element transistor is housed in a 5-pin SO-FL lead-frame SMT package with a 1.27mm pin pitch, measuring 4.9mm x 5.9mm x 1.05mm. Key electrical characteristics include a maximum gate-source voltage of ±20V, a maximum drain-source on-resistance of 3.2 mOhm at 10V, and a maximum power dissipation of 8700mW. Operating temperature range spans from -55°C to 150°C.
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Onsemi NTMFS4935NT1G technical specifications.
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SO |
| Package/Case | SO-FL |
| Lead Shape | Flat |
| Pin Count | 5 |
| PCB | 4 |
| Tab | Tab |
| Package Length (mm) | 4.9 |
| Package Width (mm) | 5.9 |
| Package Height (mm) | 1.05(Max) |
| Seated Plane Height (mm) | 1 |
| Pin Pitch (mm) | 1.27 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single Triple Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 21.8A |
| Maximum Gate Threshold Voltage | 2.2V |
| Maximum Drain Source Resistance | 3.2@10VmOhm |
| Typical Gate Charge @ Vgs | [email protected]|49.4@10VnC |
| Typical Gate Charge @ 10V | 49.4nC |
| Typical Input Capacitance @ Vds | 3579@15VpF |
| Maximum Power Dissipation | 8700mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | 5V1P1 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
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