The NTMFS4943NT1G is an N-channel junction field-effect transistor with a drain to source breakdown voltage of 30V and a continuous drain current of 41A. It has a maximum power dissipation of 22.3W and a maximum operating temperature of 150°C. The device is packaged in a lead-free DFN package and is RoHS compliant. It has an input capacitance of 1.401nF and a gate to source voltage of 20V.
PackageDFN
PolarityN-CHANNEL
Power2.6W
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Technical Specifications
Onsemi NTMFS4943NT1G technical specifications.
General
| Package/Case | DFN |
| Continuous Drain Current (ID) | 41A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 11mR |
| Element Configuration | Single |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.401nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 22.3W |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.6W |
| Radiation Hardening | No |
| Rds On Max | 7.2mR |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTMFS4943NT1G Datasheet
Download the complete datasheet for Onsemi NTMFS4943NT1G to view detailed technical specifications.
No datasheet is available for this part.