The NTMFS4946NT1G is an N-channel junction field-effect transistor with a maximum operating temperature range of -55°C to 150°C. It has a maximum drain to source breakdown voltage of 30V and a continuous drain current of 100A. The device is packaged in a lead-free DFN6 package and is RoHS compliant. The transistor has a maximum power dissipation of 890mW and a maximum Rds on of 3.4mR.
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Onsemi NTMFS4946NT1G technical specifications.
| Package/Case | DFN |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 5.1mR |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Single |
| Fall Time | 9.4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 3.25nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 890mW |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.25W |
| Radiation Hardening | No |
| Rds On Max | 3.4mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 24.6ns |
| Turn-On Delay Time | 18.9ns |
| RoHS | Compliant |
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