Single N-Channel Power MOSFET featuring 30V drain-source breakdown voltage and 78A continuous drain current. Optimized for high efficiency with a low 3.4mΩ maximum drain-source on-resistance. Delivers fast switching performance with typical turn-on delay of 11ns and fall time of 7ns. Encased in a compact DFN 5x6 package with a 1.27mm pitch, this component operates from -55°C to 150°C and offers 33W maximum power dissipation.
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Onsemi NTMFS4C05NT1G technical specifications.
| Package/Case | DFN |
| Continuous Drain Current (ID) | 78A |
| Drain to Source Resistance | 2.7mR |
| Element Configuration | Single |
| Fall Time | 7ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.05mm |
| Input Capacitance | 1.972nF |
| Lead Free | Lead Free |
| Length | 6.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 33W |
| Number of Channels | 1 |
| Package Quantity | 1500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 3.4mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 2.2V |
| Turn-Off Delay Time | 21ns |
| Turn-On Delay Time | 11ns |
| Width | 5.1mm |
| RoHS | Compliant |
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