This single N-channel power MOSFET is rated for 30 V drain-to-source voltage and 69 A continuous drain current at 25°C case temperature. It provides drain-to-source on-resistance of 4.0 mΩ maximum at 10 V gate drive and 6.0 mΩ maximum at 4.5 V. Typical input capacitance is 1683 pF, and total gate charge is 11.6 nC at 4.5 V or 26 nC at 10 V. The device is packaged in SO-8 FL, operates from -55°C to +150°C junction temperature, and is described as Pb-free and RoHS compliant.
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Onsemi NTMFS4C06N technical specifications.
| Drain-to-Source Voltage | 30V |
| Gate-to-Source Voltage | ±20V |
| Continuous Drain Current | 69A |
| Continuous Drain Current @ Case Temperature 80°C | 52A |
| Pulsed Drain Current | 166A |
| Power Dissipation | 30.5W |
| Drain-to-Source On Resistance @ VGS=10V | 4.0 maxmΩ |
| Drain-to-Source On Resistance @ VGS=4.5V | 6.0 maxmΩ |
| Gate Threshold Voltage | 1.3 to 2.1V |
| Forward Transconductance | 58S |
| Input Capacitance | 1683pF |
| Output Capacitance | 841pF |
| Reverse Transfer Capacitance | 40pF |
| Total Gate Charge @ VGS=4.5V | 11.6nC |
| Total Gate Charge @ VGS=10V | 26nC |
| Junction-to-Case Thermal Resistance | 4.1°C/W |
| Operating Junction and Storage Temperature | -55 to 150°C |
| RoHS | Compliant |
| Pb-free | Yes |
